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A semiconductor material has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Semiconductors are the foundation of modern electronics. Semiconducting materials exist in two types - elemental materials and compound materials. The modern understanding of the properties of a semiconductor relies on quantum physics to explain the movement of electrons and holes in a crystal lattice. The unique arrangement of the crystal lattice makes silicon and germanium the most commonly used elements in the preparation of semiconducting materials. An increased knowledge of semiconductor materials and fabrication processes has made possible continuing increases in the complexity and speed of microprocessors and memory devices. Some of the information on this page may be outdated within a year, due to the fact that new discoveries are made in the field frequently.

The electrical conductivity of a semiconductor material increases with increasing temperature, which is behaviour opposite to that of a metal. Semiconductor devices can display a range of useful properties such as passing current more easily in one direction than the other, showing variable resistance, and sensitivity to light or heat. Because the electrical properties of a semiconductor material can be modified by controlled addition of impurities, or by the application of electrical fields or light, devices made from semiconductors can be used for amplification, switching, and energy conversion.

Current conduction in a semiconductor occurs through the movement of free electrons and "holes", collectively known as charge carriers. Adding impurity atoms to a semiconducting material, known as "doping", greatly increases the number of charge carriers within it. When a doped semiconductor contains mostly free holes it is called "p-type", and when it contains mostly free electrons it is known as "n-type". The semiconductor materials used in electronic devices are doped under precise conditions to control the concentration and regions of p- and n-type dopants. A single semiconductor crystal can have many p- and n-type regions; the p–n junctions between these regions are responsible for the useful electronic behaviour.

Some of the properties of semiconductor materials were observed throughout the mid 19th and first decades of the 20th century. Development of quantum physics in turn allowed the development of the transistor in 1947. Although some pure elements and many compounds display semiconductor properties, silicon, germanium, and compounds of gallium are the most widely used in electronic devices. Elements near the so-called "metalloid staircase", where the metalloids are located on the periodic table, are usually used as semiconductors.

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Almost all of today’s technology involves the use of semiconductors, with the most important aspect being the integrated circuit (IC). Some examples of devices that contain integrated circuits includes laptops, scanners, cell-phones, etc. Semiconductors for IC’s are mass-produced. To create an ideal semiconducting material, chemical purity is a must. Any small imperfection can have a drastic affect on how the semiconducting material behaves due to the scale that which the materials are used.

A high degree of crystalline perfection is also required, since faults in crystal structure (such as dislocations, twins, and stacking faults) interfere with the semiconducting properties of the material. Crystalline faults are a major cause of defective semiconductor devices. The larger the crystal, the more difficult it is to achieve the necessary perfection. Current mass production processes use crystal ingots between 100 and 300 mm (4 and 12 in) in diameter which are grown as cylinders and sliced into wafers.

There is a combination of processes that is used to prepare semiconducting materials for IC’s. One process is called thermal oxidation, which forms silicon dioxide on the surface of the silicon. This is used as a gate insulator and field oxide. Other processes are called photomasks and photolithography. This process is what creates the patterns on the circuity in the integrated circuit. Ultraviolet light is used along with a photoresist layer to create a chemical change that generates the patterns for the circuit.

Etching is the next process that is required. The part of the silicon that was not covered by the photoresist layer from the previous step can now be etched. The main process typically used today is called plasma etching. Plasma etching usually involves an etch gas pumped in a low-pressure chamber to create plasma. A common etch gas is chlorofluorocarbon, or more commonly known Freon. A high radio-frequency voltage between the cathode and anode is what creates the plasma in the chamber. The silicon wafer is located on the cathode, which causes it to be hit by the positively charged ions that are released from the plasma. The end result is silicon that is etched anisotropically.

The last process is called diffusion. This is the process that gives the semiconducting material its desired semiconducting properties. It is also known as doping. The process introduces an impure atom to the system, which creates the p-n junction. In order to get the impure atoms embedded in the silicon wafer, the wafer is first put in a 1100 degree Celsius chamber. The atoms are injected in and eventually diffuse with the silicon. After the process is completed and the silicon has reached room temperature, the doping process is done and the semiconducting material is ready to be used in an integrated circuit.

Semiconductors are defined by their unique electric conductive behavior, somewhere between that of a metal and an insulator. The differences between these materials can be understood in terms of the quantum states for electrons, each of which may contain zero or one electron (by the Pauli exclusion principle). These states are associated with the electronic band structure of the material. wikipedia